Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (CAT-CVD) is a process in which the reactant gases are decomposed via catalytic or pyrolytic reactions by a heated catalyzer. This method has been successfully used to produce high quality silicon-based thin films such as amorphous-silicon (a-Si:H), nanocrystalline-silicon (nc-Si) and silicon nitride (a-SiNx:H).

Among the advantages of using HWCVD are the possibility of introducing a low concentration of hydrogen in the silicon based alloys, potential for high deposition rates and the possibility of producing high quality films at low temperatures.

MVSystems offers standalone single chambers as well as modular processing chambers that can be integrated to our cluster tools. Filament materials from tantalum and tungsten to graphite can be used. The hot wire assemblies can be supplied with substrate to filament distance adjustment. Heated and cooled substrate holders are available.